Because of the inductive loads, it'll maintain a voltage as soon as the H-bridge is disabled. It will cause a damage to switch circuit if the voltage decays to zero or switches to other direction. A proper way to avoid this problem is using the freewheeling diode(飛輪二極體), which is parallel with the FET.
MOSFET keeps heating up with no reason while the PWM duty cycle isn't 100%. The higher the input voltage the higher the heat.
My first guest was the wiring width, so I removed the top silk screen and put more solder onto the wire. It didn't help much.
Then I jumped wiring the MOSFET gate input wire, still the same.
I removed the original 220uF capacitor and changed it to two 100uF capacitors, and joined their anode and cathode to the input voltage pin directly. The problem remained.
It seems that the switch was nominal, there was no short sign. However, if we zoom in the cross over area, we can see the interesection of two voltage, so called the dead zone.
We can see that the dead zone time was 400ns and the noise cannot to be ignored. During this time, the MOSFET was shorted to ground, and directly causing a huge current flow through it. This is the source of heat.
The pictures below is the nominal dead zone width should be.
We can see the left picture, the dead zone is almost shrinking to a point. Although after zooming in the wave, the width is 720ns larger than the subnormal one, the A->Y is only 1.6V, compare to the subnormal one which is 10v. No wander there is no heat in this circuit.
The dead zone is too wide.
From datasheet we can see the dead time adjust resistor called .
I use for , so the should rest between 815ns to 2us. However, there was no different between the nominal one and subnormal one. It makes no sence why there were the huge difference in dead time.
My fourth guess is the layout problem, due to the high frequency interference. But it is too hard for me to fix the problem, so I decided to change the gate driver to give it a try. I changed a used A3941 to a new one. Here's the result.
The dead time was reduced to 312ns, the peak of A-Y was 5.76v. Although A-Y is still a little bit high, due to the shorter dead time, the overall heat waste was negligible.
2022/10/31 [005]
Heat produced by LDO
Because of the current drawed by fault optocoupler, the two channels of LED inside optocoupler will consume 32mA. And the power dissipation is the source of the heat, therefore, I lower the current goes through the optocoupler by increasing the resistors from to .
However, the decrease of current causing the lack triggering voltage of transistor for the fault LED. So, I changed the pull up resistor to . The problem was solved.
Reverse polarity of output causing FF2 being low
FF2 being low means three possible issue.
The reason why FF2 was detected to be HIGH is because the damage of GHA R3 resistor. It works fine after the replacement.