---
tags: servolab
---
# 半導體題目

- 在 Gas Stick 中過濾微塵 Paticle 的裝置名稱 ?

- Injection Valve 讓液體、氣體混和主要是靠哪一個裝置 ?

- 在液體流量供應系統中用來控制液體流量的裝置為 ?

- LFM 是利用開放迴路來控制閥門開關大小及液體輸出 ? (Yes/No)

- 在 LFM 中用來感知流量的裝置是透過一個特殊元件安裝在不鏽鋼管路邊，用以感應液體流動後的溫度變化，此元件名稱為 ?

- MFC 精準流量控制範圍是 ?

- MFC 計算氣體流量是採用氣體熱動力學第幾方程式 ?

- 一般 MFC 校正要靠另一類更精準的 MFC 名稱為 ?

- MFC 控制電路內有個電橋用來輸出電訊號名為 ?

- 不同氣體流量要搭配適當的校正參數才會精準，氮氣的校正參數為 ?

- 在 Gas Stick 中用來控制氣體流量的裝置為 ?

- 手動調節 Gas Stick 進氣壓力的閥門為 ?

- 在 Gas Panel 中線路圖示中此圖示代表 ?

- 在氣體盤面中 Check Valve 的作用為 ?

- 在氣體盤面中若有此標示表示什麼 ?

- 氮氣 N~2~ 具有何種危害 ?

- 本課堂中所介紹用來偵測 gas panel 發生火災的裝置名稱為 ?

- 本課堂中所介紹緊急應變小組人員所穿戴具有獨立呼吸面罩及氧氣鋼瓶的個人防護裝備名稱為 ?

- 氣體流速快、壓力小;流速慢、壓力大為什麼定律 ?

- 毒氣外洩要如何處置 ?

- List three common dopant atoms

- How does the ion implanter extract the ions from the ion source ?

- Which of two components are the main filter to filter out the unwanted ions in an ion implanter ?

- Describe how an ion implanter to eliminate the positive charge on the wafer surface

- Which kind of dopant atoms can create n-type semi-conductor on the silicon wafer ?

- 離子化金屬藉由 bias RF power 形成 DC Bias 電壓，主動將金屬離子吸引至 wafer 的 PVD 製程反應室名稱為 ?

- Preclean Chamber 利用何種原理將 Wafer 表面的氧化物去除 ?

- 藉由在 PVD 製程反應室內放置柵欄來過濾歪斜掉落金屬，以提高金屬鍍膜的垂直性之製程反應室名稱為 ?

- Preclean Chamber 主要的目的為 ?

- 在 PVD 製程時，會通入哪一種惰性氣體，以製造電漿來轟擊金屬靶材 ?

- 在 300mm Endura2 PVD Chamber 中使用高電阻值的冷卻水，其名稱為 ?

- 在下圖 TTN Barrier 的鍍膜中， Ti 金屬層鍍膜主要目的為 ?

- List five metal materials which can be used on the PVD process for wafer manufacturing ?

- What's the function of the preclean chamber ?
> Preclean chamber is used the ion bombard technology to remove the native oxide on the wafer surface

- What's the difference between DC and RF PVD chamber ?

- What's the purpose of the Degas chamber in 300mm Endura2 PVD system ?

- What are the two basic types of motors mentioned in the course ?

- What are the two types of position feedback mechanism mentioned in the course ?

- List any one component that connect motor and robot assembly to make robot run

- What are the two basic components of the Encoder ?

- What is the basic principle of motor Rotation Theory ?

- 在機械手臂中，列舉兩種裝置，可以將馬達產生的動能傳遞到手臂 ?

- 本課程所介紹兩種 robot position feedback 裝置，名稱為 ?

- Aligner 是利用哪種裝置使 Wafer 在旋轉時不至於飛出去 ?

- 下圖的 FI standard robot blade 可以耐受 Wafer 的溫度為 ?

- 本課程中 FX robot 總共安裝幾隻 robot blade ?

- 半導體設備中，利用哪個裝置來找到 Wafer 的原點 ?

- 在大氣下的 FI robot blade 前緣，安裝 through beam laser 的作用為 ?

- 機械手臂計步器，利用發射與接收光感應訊號來輸出步數，其步數為相對於原點 (home position) 的步數，若遇到系統斷電就必需重新回到原點，其計步器名稱為 ?

- 本課程中 FI robot 利用同軸的方式來達到減速的裝置，其名稱為 ?

- 在機械手臂的計步器中，利用線圈輸出波型訊號再轉換成步數訊號的計步器為 ?

- 當機械手臂發生故障無法操作時，進行故障排除的第一個動作為 ?

- 利用光感應元件 (optical sensor) 來傳送 robot 行進的步數，是哪一種元件 ?

- 本課程中 Servo Motor Control 是針對哪三個訊號做閉迴路控制 ?

- 在本課程中，提到 VHP + Robot 其控制模型為 ?

- 5 相步進馬達運轉中，從 A 相激磁切換到 B 相激磁，轉子旋轉幾度角 ?

- 在馬達的控制模型中，具有設計簡單、低成本、穩定性高及平順控制的控制模型為 ?

- 從本教材馬達的動畫中，依續以順時針方向切換定子的電流，此馬達轉子會呈現哪個方向的旋轉 ? (順時針/逆時針)

- 作用於定子與轉子之間，驅動馬達旋轉的力量稱為 ?

- 馬達會旋轉的原理是利用定子線圈電流並形成 "向量場" 而推動轉子旋轉 ? (True/False)

- 要讓馬達可以正常旋轉，電流必須通入馬達的哪一個線圈 ? (轉子線圈/定子線圈)

- 在 5 相步進馬達的結構中，外側安裝有多少個線圈 ?

- List 3 different wafer chuck methods ?

- The Chucking Force equation $F_{Total} = \frac{CV^2}{D}$. What is the "D" definition ?

- What's the ESC name of the two different materials (insulator and semiconductive) using on the ESC surface in this class ?

- What are two types of ESC based on the material used ?

- What are two types of ESC based on chucking electrode ?

- What are the two purpose of backside gas ?

- What is common method to overcome residual charge in Johnsen-Rahbeck (J-R) ESC ?

- In semiconductor equipment hitstory, what are the major 3 types of wafer carrier ?

- What are the common components in a gas stick ?

- List two kinds of common pumps which can create Ultra-high vacuum

- What is the material of the filament in a Titanium sublimation pump ?

- What is the typical operation temperature range for cryo pump stage 2 ?

- What is the meaning of "Direct measurement" during the vacuum measurement ?

- What is the core apparatus of leak detector ?

- List 2~3 CVD process factors

- Describe function of IMD layer

- Describe function of STI layer

- What's the meaning of CD

- We use **high k** or **low k** film to be isolation layer

- Which of following purpose for getting wafer ion implanted ?
> - [ ] a. Increase the eletric holes of electron concentration
> - [ ] b. Create a thin film for electrical conductivity
> - [ ] c. To replace all Si convalence bond'
> - [ ] d. None of the above

- Why dose an ion implanter need the high volt supplied in the system ?
> - [ ] a. Create ions for implant
> - [ ] b. Accelerate, Decelerate and supply energy to ion
> - [ ] c. Make ion implant more efficiency
> - [ ] d. All of the above

- How does the magnetic filed affect ions in the ion implanter ?
> - [ ] a. Magnetic field has no impact to ions
> - [ ] b. F = IL x B is created thereby changing the ion dirction
> - [ ] c. F = qE is created thereby changing the ion direction
> - [ ] d. F = qV x B is created thereby changing the ion direction
> - [ ] e. None of the above

- Which of following cooling media used for cooling down heat generating components ?
> - [ ] a. Chemical coolant
> - [ ] b. DI water
> - [ ] c. N2 flow
> - [ ] d. None of the above

- Select the correct component which secures the implant dose ?
> - [ ] a. Magnet Coils
> - [ ] b. High voltage power supplies
> - [ ] c. Dose is not monitored
> - [ ] d. Faraday cup

- When performing a RF generator calibration for the EnCoRe II Cu chamber, which frequency must the watt meter be able to read ?
> - [ ] a. 400.0kHz
> - [ ] b. 60MHz
> - [ ] c. 2.0MHz
> - [ ] d. 13.56MHz

- Which of the following os correct in the description of PVD process ?
> - [ ] a. Deposit the metal film on the contact, via and inter connect for signal transmission
> - [ ] b. Publish the metal film on the wafer surface for the film thickness control
> - [ ] c. Deposit the dielectric film on the wafer surface to form the insulator
> - [ ] d. Using chemical to remove the dielectric film and form a trench for next process step

- What's the maximum allowable number of PVD/ALPS chambers configurable on an Endura2 system ?
> - [ ] a. 2
> - [ ] b. 3
> - [ ] c. 4
> - [ ] d. 5

- Which of the following component is used to improve the uniformity during metal deposition ?
> - [ ] a. Shutter Disk located in the process chamber
> - [ ] b. Cryo pump under the process chamber
> - [ ] c. Rotation magnet inside the target
> - [ ] d. Chamber shield located inside the process chamber

- In robot control system, which element is responsible for feedback robot position signal ?
> - [ ] a. Leadscrew
> - [ ] b. Blade
> - [ ] c. Motor
> - [ ] d. Encoder

- Which of the following components does not link to motor with robot assembly to make robot run ?
> - [ ] a. Leadscrew
> - [ ] b. Gear Box
> - [ ] c. Belt
> - [ ] d. Valve

- Which of the following is use of optical sensors to transmit the number of robot steps ?
> - [ ] a. Resolver
> - [ ] b. Encoder
> - [ ] c. Lead screw
> - [ ] d. Magnet Coupling

- Which of the following robot steps calculating components is more accurate to calculate the feedback step number and more suitable for precision mechanical control ?
> - [ ] a. Encoder
> - [ ] b. Resolver

- Which element is used to calculate and correct the feedback signal error in robot control system ?
> - [ ] a. Encoder
> - [ ] b. Motor
> - [ ] c. Driver
> - [ ] d. Leadscrew

- By using monopolar ESC, What action must be done first to chuck wafer ?
> - [ ] a. Chucking voltage turn on
> - [ ] b. Backside gas turn on
> - [ ] c. Plasma Turn on
> - [ ] d. Temperature increasing

- What statement best describes the Johnsen-Rahbeck (J-R) ESC ?
> - [ ] a. High resistivity, typically operate at high temperature
> - [ ] b. High resistivity, typically operate at low temperature
> - [ ] c. Low resistivity, typically operate at high temperature
> - [ ] d. Low resistivity, typically operate at low temperature

- What is not the reason of choosing Helium as backside gas ?
> - [ ] a. High thermal conductivity
> - [ ] b. Helium is relative cheaper
> - [ ] c. Less reaction with process gas and wafer
> - [ ] d. Small kinetic diameter

- What is not a method heat transfer ?
> - [ ] a. Radiation
> - [ ] b. Conduction
> - [ ] c. Convection
> - [ ] d. Fiction

- Which ESC is non-sensitive to wafer backside partical ?
> - [ ] a. Coulomb ESC
> - [ ] b. Johnsen-Rahbeck ESC
> - [ ] c. Both are sensitive
> - [ ] d. Both are non-sensitive

- Which of the following is not correct method for the ....
> - [ ] a. Verify MFC output signal
> - [ ] b. Chamber Rate-of-Rise Flow Calibration
> - [ ] c. Mass Flow Verifier (MFV)
> - [ ] d. Golden MFC calibration

- Which of the following process you don't need to perform the MFC calibration ?
> - [ ] a. Process results are out of specification
> - [ ] b. After replacement
> - [ ] c. During system startup
> - [ ] d. Change has flow setting

- What is the definition of Vacuum ?
> - [ ] a. A state which has nothing (no gas molecles) in a space
> - [ ] b. A state which lacks electrons and materials in a space
> - [ ] c. A state which has smaller pressure or gas molecule density in a space to the ambient

- Mean free path (MFP) increases with ?
> - [ ] a. Larger chamber size
> - [ ] b. Bigger kinematic energy of gas molecules
> - [ ] c. Higher gas molecules density in a space
> - [ ] d. Decreasing pressure in a space

- Continuous flow only occurs during
> - [ ] a. Rough vacuum
> - [ ] b. Medium vacuum
> - [ ] c. High vacuum
> - [ ] d. Ultra high vacuum

- Which of following pump uses the ultra-low temperature to pump down chamber ?
> - [ ] a. Roots blower (pump)
> - [ ] b. Turbo pump
> - [ ] c. Dry screw pump
> - [ ] d. Cryo pump (低溫泵)

- Leak detector can help for leak check to a chamber by using which media ?
> - [ ] a. N~2~
> - [ ] b. He
> - [ ] c. Ar
> - [ ] d. CDA (Clean dry air)

- What is the meaning of CVD ?
> - [ ] a. Chemical Vapor Deposition (化學氣相沉積法)
> - [ ] b. Chemistry Vapor Dipositive
> - [ ] c. Chemical Vessel Deposition
> - [ ] d. Chemical Vapor Dipositive
> - [ ] e. Above of all

- What's the meaning of IMD ?
> - [ ] a. Inter Metal Deposition
> - [ ] b. Inter Mechanical Dipositive
> - [ ] c. Inter Metal Dielectric (金屬介電層)
> - [ ] d. Inter Mechanical Depositive
> - [ ] e. Above of all

- What's the meaning of STI ?
> - [ ] a. Shallow Tech Isolation
> - [ ] b. Shallow Trench Isofix
> - [ ] c. Shallow Trench Isolation (淺槽隔離)
> - [ ] d. Shallow Tech Isofix
> - [ ] e. Above of all

- Process factors for PE-CVD ?
> - [ ] a. Pressure
> - [ ] b. Temperature
> - [ ] c. Power
> - [ ] d. Gas Flow Rate
> - [ ] e. Above of all

- What's the meaning of PE-CVD and HDP-CVD ?
> - [ ] a. Plasma Enhance - CVD
> - [ ] b. High Density Plasma - CVD
> - [ ] c. Pressure Enhance - CVD
> - [ ] d. High Deposition Plasma - CVD
> - [ ] e. Above of all