Basics of CMOS Technology
NAND : pMOS in parallel { remember by APP, A : (N)AND, P : pMOS, P : parallel}
Types of analysis
Transient : calculates a circuit's response over a period of time defined by the user
Open LTSpice XVII
Add component => serach for voltage
Right click on the voltage component, click on advanced settings, and give the parameters to make the source V-pulse.
Add components, R : 1kΩ ohm C : 1µF
Connect components with wire, add a ground reference point.
Right click on the schematic, create a Label Net, to observe voltage at a particular point.
Click on the label-net, to observe the voltage trend. To compare the output with input, also create a label-net for the input side.
Peak Voltage 5V
timestamp | voltage | remarks |
---|---|---|
1.71ms | 0.5V | Reaching V10 at charging |
23.41ms | 4.5V | Reaching V90 at charging |
102.56ms | 4.5V | Reaching V90 at discharging |
124.39ms | 0.5V | Reaching V10 at discharging |
CMOS
Create symbolic, schematic, merge and run
Transient and DC analysis for the following
To create symbol
param | pulse 1 | pulse 2 |
---|---|---|
v_initial | 0 | 0 |
Von | 5 | 5 |
Tdelay | 0 | 0 |
Trise | 0.001 | 0.001 |
Tfall | 0.001 | 0.001 |
Ton | 0.1 | 0.2 |
Tperiod | 0.2 | 0.4 |
A | B | Output |
---|---|---|
0 | 0 | 1 |
0 | 1 | 1 |
1 | 0 | 1 |
1 | 1 | 0 |
pMOS in series, nMOS in parallel
A | B | Output |
---|---|---|
0 | 0 | 1 |
0 | 1 | 0 |
1 | 0 | 0 |
1 | 1 | 0 |
A | B | Output |
---|---|---|
0 | 0 | 0 |
0 | 1 | 1 |
1 | 0 | 1 |
1 | 1 | 0 |
A | B | Output |
---|---|---|
0 | 0 | 1 |
0 | 1 | 0 |
1 | 0 | 0 |
1 | 1 | 1 |
4x1 MuX using CMOS
2x1 MuX using CMOS
To create 4x1 MuX using 2x1
Why to use CMOS technology ?
When to prefer BJT over CMOS ?
Faster speeds, as in CMOS